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STPS12045TV
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500 V(RMS) Capacitance = 45 pF DESCRIPTION Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOTOP, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) per diode Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 95C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 45 125 60 120 900 2 5 - 55 to + 150 150 10000 Unit V A A A A A C C V/s ISOTOPTM 2 x 60 A 45 V 150 C 0.67 V
K1 A1 K2 A2
tp = 10 ms Sinusoidal tp = 2 s square F = 1kHz tp = 100s square
dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj
ISOTOP is a registered trademark of STMicroelectronics
June 1999 - Ed: 3A
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STPS12045TV
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c)
When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c)
Parameter Junction to case Per diode Total Coupling
Value 1 0.55 0.1
Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Pulse test : * tp = 380 s, < 2%
Min.
Typ. 43
Max. 1 150 0.91
Unit mA V
VR = VRRM IF = 120 A IF = 120 A IF = 60 A 0.72 0.52
0.87 0.67
To evaluate the conduction losses use the following equation : P = 0.47 x IF(AV) + 0.00333 x IF2(RMS)
Fig. 1: Average forward power dissipation versus average forward current (per diode).
Fig. 2: Average current versus case temperature (= 0.5) (per diode).
PF(av)(W) 60 55 50 45 40 35 30 25 20 15 10 5 0
= 0.1 = 0.05 =1 = 0.2
IF(av)(A) 70
= 0.5
60 50 40
Rth(j-a)=Rth(j-c)
Rth(j-a)=5C/W
30
T
20 10
tp
T
IF(av) (A) 0 10 20 30 40 50 60
=tp/T
=tp/T
tp
Tamb(C) 50 75 100 125 150
70
80
0
0
25
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STPS12045TV
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig.4 : Relative variation of thermal transient impedance junction to case versus pulse duration.
IM(A) 400 350 300 250 200 150 100 50 0 1E-3
IM t
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
Tc=75C Tc=100C Tc=125C
= 0.5
0.4 0.2
= 0.2 = 0.1
T
=0.5
t(s) 1E-2 1E-1 1E+0
Single pulse
tp(s) 1E-2 1E-1
=tp/T
tp
0.0 1E-3
1E+0
5E+0
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode).
IR(A) 5E+5 1E+5 1E+4 1E+3 1E+2
Tj=25C Tj=150C Tj=125C Tj=100C Tj=75C
C(nF) 10.0
F=1MHz Tj=25C
1.0
Tj=50C
1E+1 VR(V) 1E+0 0 5 10 15 20 25 30 35 40 45
0.1 1 2 5 VR(V) 10 20 50
Fig. 7: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 1E+3
Typical values Tj=125C Tj=25C
1E+2
Tj=125C
VFM(V) 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
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STPS12045TV
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193
Type
Marking
Package ISOTOP
Weight 28.9 without screws
Base qty 10
Delivery mode Tube
STPS12045TV STPS12045TV
Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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